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Electroluminescence from p-n Junction Leds Consisting of N-Doped and Cl-Doped ZnSe Layers

Published online by Cambridge University Press:  21 February 2011

K. Ohkawa ,
A. Ueno  and
T. Mitsuyu
K. Ohkawa
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
A. Ueno
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
T. Mitsuyu
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
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Abstract

We have fabricated ZnSe p-n junction LEDs with a new structure of Pt/p-ZnSe/n-ZnSe/n-GaAs. The dopant used for n-type ZnSe was Cl, and p-type ZnSe:N was formed by nitrogen radical doping. The LEDs exhibited good rectification properties. We have found that electroluminescence at 77 K was dominated by recombination emission between free electrons and acceptor holes at 2.705 eV. Increasing the temperature, recombination emission between donor electrons and free holes dominated blue bandedge emission region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 339
Copyright
Copyright © Materials Research Society 1992

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References

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