Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-28T20:56:59.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

Published online by Cambridge University Press:  29 August 2012

XinYi Chen ,
Alan M. C. Ng ,
Aleksandra B. Djurišić ,
Chi Chung Ling ,
Wai-Kin Chan ,
Wai Keung Fong ,
Hsian Fei Lui  and
Charles Surya
XinYi Chen
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, P. R. China
Alan M. C. Ng
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, P. R. China
Aleksandra B. Djurišić
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, P. R. China
Chi Chung Ling
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, P. R. China
Wai-Kin Chan
Affiliation:
Department of Chemistry, The University of Hong Kong, Hong Kong, P. R. China
Wai Keung Fong
Affiliation:
Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
Hsian Fei Lui
Affiliation:
Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
Charles Surya
Affiliation:
Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
Get access

Abstract

Light-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.

Keywords

nanostructureoxidedevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 109 - 114
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Özgur, Ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., Avrutin, V., Cho, S. J. and Morkoç, H., J. Appl. Phys. 98, 041301 (2005).CrossRefGoogle Scholar
Djurišić, A. B., Ng, A. M. C. and Chen, X. Y., Prog. Quantum Electron. 34, 191 (2010).CrossRefGoogle Scholar
Djurišić, A. B. and Leung, Y. H., Small 2, 944 (2006).CrossRefGoogle Scholar
Djurišić, A. B., Chen, X. Y., Leung, Y. H. and Ng, A. M. C., J. Mater. Chem. 22, 6526 (2012).CrossRefGoogle Scholar
Chen, X. Y., Ng, A. M. C., Fang, F., Djurišić, A. B., Chan, W. K., Tam, H. L., Cheah, K. W., Fong, P. W. K., Lui, H. F. and Surya, C., J. Electrochem. Soc. 157, H308 (2010).CrossRefGoogle Scholar
Park, W. I., Yi, G. -C., Adv. Mater. 16, 87 (2004).CrossRefGoogle Scholar
Ng, A. M. C., Chen, X. Y., Fang, F., Hsu, Y. F., Djurišić, A. B., Ling, C. C., Tam, H. L., Cheah, K. W., Fong, P. W. K., Lui, H. F., Surya, C. and Chan, W. K., Appl. Phys. B 100, 851 (2010).CrossRefGoogle Scholar
Jeong, M. –C., Oh, B. –Y., Ham, M. –H., Lee, S. –W. and Myoung, J. –M., Small 3, 568 (2007).CrossRefGoogle Scholar
Lee, H. –Y., Lee, C. –T. and Yan, J. –T., Appl. Phys. Lett. 97, 111111 (2010).CrossRefGoogle Scholar
Chen, X. Y., Ng, A. M. C., Fang, F., Ng, Y. H., Djurišić, A. B., Tam, H. L., Cheah, K. W., Gwo, S., Chan, W. K., Fong, P. W. K., Lui, H. F. and Surya, C., J. Appl. Phys. 110, 094513 (2011).CrossRefGoogle Scholar
Rogers, D. J., Hosseini Teherani, F., Yasan, A., Minder, K., Kung, P. and Razeghi, M., Appl. Phys. Lett. 88, 141918 (2006).CrossRefGoogle Scholar
Sadaf, J. R., Israr, M. Q., Kishwar, S., Nur, O. and Willander, M., Nanoscale Res. Lett. 5, 957 (2010).CrossRefGoogle Scholar
Ahn, J., Mastro, M. A., Hite, J., Eddy, C. R. and Kim, J., Appl. Phys. Lett. 97, 082111 (2010).CrossRefGoogle Scholar
Lupan, O., Pauporté, T. and Viana, B., Adv. Mater. 22, 3298 (2010).CrossRefGoogle Scholar
Park, S. –H., Kim, S. –H. and Han, S. –W., Nanotechnology 18, 055608 (2007).CrossRefGoogle Scholar
Zhu, H., Shan, C. X., Yao, B., Li, B. H., Zhang, J. Y., Zhang, Z. Z., Zhao, D. X., Shen, D. Z., Fan, X. W., Lu, Y. M. and Tang, Z. K., Adv. Mater. 21, 1613 (2009).CrossRefGoogle Scholar
Guo, Z., Zhang, H., Zhao, D. X., Liu, Y. C., Yao, B., Li, B. H., Zhang, Z. Z. and Shen, D. Z., Appl. Phys. Lett. 97, 173508 (2010).CrossRefGoogle Scholar
Lu, T. C., Ke, M. Y., Yang, S. C., Cheng, Y. W., Chen, L. Y., Lin, G. J., Lu, Y. H., He, J. H., Kuo, H. C. and Huang, J. J., Opt. Lett. 35, 4109 (2010).CrossRefGoogle Scholar
Jiao, S. J., Lu, Y. M., Shen, D. Z., Zhang, Z. Z., Li, B. H., Zhang, J. Y., Yao, B., Liu, Y. C. and Fan, X. W., Phys. Stat. Sol. C 3, 972 (2006).Google Scholar
Chen, X. Y., Fang, F., Ng, A. M. C., Djurišić, A. B., Chan, W. K., Lui, H. F., Fong, P. W. K., Surya, C. and Cheah, K. W., Thin Solid Film 520, 1125 (2011).CrossRefGoogle Scholar
Fu, H. K., Cheng, C. L., Wang, C. H., Lin, T. Y. and Chen, Y. F., Adv. Funct. Mater. 19, 3471 (2009).CrossRefGoogle Scholar