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Electromigration Reliability in Nanoscale Cu Interconnects

Published online by Cambridge University Press:  01 February 2011

C.-K. Hu ,
L. M. Gignac ,
B. C. Baker-O'Neal ,
G. Bonilla ,
E. G. Liniger  and
P. L. Flaitz
C.-K. Hu
Affiliation:
Haohu@us.ibm.com, IBM, Si Department, IBM T, J, Watson Research Center, P.O. Box 218, Yorktown Heights, NY, 10598, United States, 9149452378, 9149452141
L. M. Gignac
Affiliation:
gignac@us.ibm.com, IBM T.J. Watson Research Center, Yortown Heights, NY, 10598, United States
B. C. Baker-O'Neal
Affiliation:
bakercb@us.ibm.com, IBM T.J. Watson Research Center, Yortown Heights, NY, 10598, United States
G. Bonilla
Affiliation:
gbonilla@us.ibm.com, IBM T.J. Watson Research Center, Yortown Heights, NY, 10598, United States
E. G. Liniger
Affiliation:
eliniger@us.ibm.com, IBM T.J. Watson Research Center, Yortown Heights, NY, 10598, United States
P. L. Flaitz
Affiliation:
flaitz@us.ibm.com, IBM Microelectronics Division, Hopewell Junction, NY, 12533, United States
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Abstract

Electromigration behavior in Cu damascene wires was studied for various Cu grain struc-tures. The grain size was modulated by Cu linewidth and thickness, and by adjusting the wafer annealing process step after Cu electroplating and before Cu chemical mechanical polishing. A larger variation of Cu grain size between the samples was achieved on CMOS 65 nm node tech-nology than previous nodes which was due to the finer line width and thinner metal thickness. The Cu lifetime and mass flow in samples with bamboo, near bamboo, bamboo-polycrystalline mixture, and polycrystalline grain structures were measured. The effects of a Cu(2.5 wt.% Ti) alloy seed, Cu surface pre-clean, and selective electroless CoWP deposition techniques on Cu electromigration were also observed and a significantly improved Cu lifetime was found. The electromigration activation energies for Cu in Cu(Ti) alloy, along Cu/amorphous a-SiCxNyHz in-terface and grain boundary were found to be 1.3, 0.95 and 0.79 ± 0.05 eV, respectively. In addition the Cu line size effect on the Cu conductivity for Cu area less than 4×104 nm2 was found to be a linear function of the Cu line area.

Keywords

Cuelectromigrationmicrostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1036: Symposium M – Materials and Hyperintegration Challenges in Next-Generation Interconnect Technology , 2007 , 1036-M05-02
Copyright
Copyright © Materials Research Society 2008

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