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Electron and Hole Trapping Dynamics in Semiconductor Nanocrystals: Femtosecond Nonlinear Transmission and Photoluminescence Study

Published online by Cambridge University Press:  15 February 2011

V. Klimov  and
D. McBranch
V. Klimov
Affiliation:
Chemical Sciences and Technology Division, CST-6, MS-J585, Los Alamos National Laboratory, Los Alamos, NM 87544, klimov@lanl.gov
D. McBranch
Affiliation:
Chemical Sciences and Technology Division, CST-6, MS-J585, Los Alamos National Laboratory, Los Alamos, NM 87544, klimov@lanl.gov
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Abstract

Application of two complementary femtosecond techniques (time-resolved nonlinear transmission and photoluminescence up-conversion) allows us to observe separately the electron and the hole relaxation paths in CdS nanocrystals. The obtained data indicate that hole relaxation channels are different at low and high pump fluences which is attributed to an Auger-process-assisted hole trapping at surface/interface states activated at high excitation intensities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 317
Copyright
Copyright © Materials Research Society 1997

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References

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