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Electron Injection-Induced Effects in GaN: Physics and Applications

Published online by Cambridge University Press:  01 February 2011

Leonid Chernyak  and
William Burdett
Leonid Chernyak
Affiliation:
Department of Physics, University of Central Florida, Orlando, FL 32816-2385, U.S.A.
William Burdett
Affiliation:
Department of Physics, University of Central Florida, Orlando, FL 32816-2385, U.S.A.
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Abstract

Electron injection into p-type GaN and related compounds leads to a pronounced increase in the minority carrier lifetime. This increase is manifested in a multiple-fold elongation of the minority carrier diffusion length as is evident from the Electron Beam Induced Current (EBIC) measurements in-situ in a Scanning Electron Microscope. Minority carrier transport enhancement as a result of electron injection is consistent with the changes observed in the material's luminescent properties. Based on the activation energy for the electron injection-induced effects, we ascribe this phenomenon to charging of Mg-acceptor related levels. In addition, we demonstrate an impact of electron injection on responsivity of GaN p-i-n photodetectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C5.4
Copyright
Copyright © Materials Research Society 2003

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