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Electron Irradiation Doping with Carbon in Chemical Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

Y. Iimura ,
K. Nagata ,
S. Den ,
Y. Aoyagi  and
S. Namba
Y. Iimura
Affiliation:
Quantum Research Laboratory, Frontier Research Program, RIKEN, Hirosawa, Wako-shi, Saitama 351-01, Japan.
K. Nagata
Affiliation:
Quantum Research Laboratory, Frontier Research Program, RIKEN, Hirosawa, Wako-shi, Saitama 351-01, Japan.
S. Den
Affiliation:
Irie Koken Co., Ltd., Kawagoe-shi, Saitama 356, Japan.
Y. Aoyagi
Affiliation:
Quantum Research Laboratory, Frontier Research Program, RIKEN, Hirosawa, Wako-shi, Saitama 351-01, Japan.
S. Namba
Affiliation:
Quantum Research Laboratory, Frontier Research Program, RIKEN, Hirosawa, Wako-shi, Saitama 351-01, Japan.
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Abstract

Dissociation species produced by low-energy electron Irradiation of triethylgallium (TEGa) have been used as a carbon doping source during growth of GaAs by chemical beam epitaxy. Mass spectral analysis shows that TEGa dissociates at electron energies greater than 20 eV, and that the fragmentation pattern of TEGa consists of methyl radicals, ethyl radicals, and gallium compounds. In order to study the doping properties of carbon, carbon-doped GaAs films were grown under several conditions and were characterized by Hall measurements, photoluminecence spectrum, secondary Ion mass spectrometry, and double crystal X-ray diffraction. The hole carrier concentration could be varied up to ∼1020 cm−3, and the doping profile of carbon was well-controlled.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 97
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Tsang, W.T. and Miller, R.C., Appl.Phys.Lett. 48, 1288 (1986).CrossRefGoogle Scholar
[2] Tsang, W.T., Chui, T.H., Cunningham, J.E., and Robertson, A., Appl.Phys.Lett. 50, 1376 (1987).Google Scholar
[3] Putz, N., Veuhoff, E., Heinecke, H., Heyen, M., Luth, H., and Balk, P., J.Vac.Sci.Technol. B3 671 (1985).Google Scholar
[4] Horiguchi, S., Kimura, K., Kamon, K., Mashita, M., Shimazu, M., Mihara, M., and Ishil, M., Jpn.J.Appl.Phys. 25, L979 (1986).Google Scholar
[5] Yamada, T., Tokumitsu, E., Salto, K., Akatsuka, T., Miyauchl, M., Konagal, M., and Takahashi, K., Proc.5th Int. Conf. on Molecular Beam Epitaxy, Sapporo, Japan, (1988) p.181.Google Scholar
[6] Guid, L.J., Jackson, G.S., Hall, D.C., Plano, W.E., and Holonyak, N. Jr, Appl.Phys. Lett. 52, 522 (1988).Google Scholar
[7] Uematsu, M. and Imamura, Y., Jpn.J.Appl.Phys. 25, L940 (1986).Google Scholar
[8] Hilsum, C., Electron Lett. 10, 259 (1974).Google Scholar
[9] Ploog, K., Fischer, A., and Kunzel, H., J.Electrochem.Soc. 128, 400 (1981).Google Scholar