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Electron Irradiation of 4H SiC by TEM: An Optical Study

Published online by Cambridge University Press:  21 March 2011

S. G. Sridhara ,
P. O. Å. Persson ,
F. H. C. Carlsson ,
J. P. Bergman ,
E. Janzén ,
G. Evans  and
J. W. Steeds
S. G. Sridhara
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
P. O. Å. Persson
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
F. H. C. Carlsson
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
J. P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
E. Janzén
Affiliation:
Department of Physics, University of Bristol, BS8 1TL Bristol, UK
G. Evans
Affiliation:
Department of Physics, University of Bristol, BS8 1TL Bristol, UK
J. W. Steeds
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linköping, Sweden
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Abstract

An intrinsic defect spectrum, commonly observed after ion-implantation, electron, proton or neutron irradiation and even after SIMS measurements is investigated using photoluminescence techniques. The spectrum is associated with carbon related isoelec-tronic centers having a pseudodonor like behaviour. Vacancy-interstitial pair complexes are tentatively suggested as the defect centers responsible for this intrinsic spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H6.5
Copyright
Copyright © Materials Research Society 2001

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References

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