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The Electron Mobility in Amorphous Silicon Under Double Injection

Published online by Cambridge University Press:  26 February 2011

D. Goldie ,
P. G. LeComber  and
W. E. Spear
D. Goldie
Affiliation:
Carnegie Laboratory of Physics, University of Dundee, Dundee, Scotland, UK
P. G. LeComber
Affiliation:
Carnegie Laboratory of Physics, University of Dundee, Dundee, Scotland, UK
W. E. Spear
Affiliation:
Carnegie Laboratory of Physics, University of Dundee, Dundee, Scotland, UK
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Abstract

The transport of a pulse of photogenerated excess electrons has been investigated in a-Si p+-i-n+ junctions under forward bias in the presence of strong double injection. It is found that the electron drift mobility is completely independent of forward current densities of up to 0.33 Acm−2, in disagreement with the work of Silver et al. We suggest that the experimental disagreement arises from problems inherent in the voltage step technique of mobility measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 489
Copyright
Copyright © Materials Research Society 1988

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