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Electron Paramagnetic Resonance of Intrinsic Defects in III-V Semiconductors

Published online by Cambridge University Press:  28 February 2011

N. D. Wilsey  and
T. A. Kennedy
N. D. Wilsey
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000, USA
T. A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000, USA
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Abstract

The use of electron paramagnetic resonance to investigate intrinsic defects in the III-V semiconductors is reviewed. Particular attention is given to lattice vacancies, antisites and their complexes in GaP, GaAs, and InP. The role of EPR in arriving at an understanding of these defects is emphasized and the interplay between experiment and theory is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 309
Copyright
Copyright © Materials Research Society 1985

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