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Electron Paramagnetic Resonance Studies of Intrinsic Bonding Defects and Impurities in SiO2 Thin Solid Films

Published online by Cambridge University Press:  25 February 2011

Robert N. Schwartz ,
Marion D. Clark ,
Walee Chamulitrat  and
Larry Kevan
Robert N. Schwartz
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
Marion D. Clark
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
Walee Chamulitrat
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77004
Larry Kevan
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77004
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Abstract

Electron paramagnetic resonance (EPR) spectroscopy has been used to identify paramagnetic intrinsic bonding defects and impurities in as-deposited thin solid SiO2 films. Thin films grown by E-beam vacuum deposition, RF sputtering, thermal oxidation of polysilicon, plasma enhanced chemical vapor deposition (PECVD), and low pressure chemical vapor deposition (LPCVD) techniques have been examined. Some of the growth techniques yield films that have paramagnetic centers similar to those found in bulk radiation-damaged vitreous SiO2. A new temperature dependent EPR center was observed in PECVD SiO2 films and has been assigned to trapped NO2. Slow-motional EPR lineshape theory was used to analyze the temperature dependent spectra.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985 , 359
Copyright
Copyright © Materials Research Society 1986

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