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Electron scattering in two-dimensional disordered heterostruetures

Published online by Cambridge University Press:  21 March 2011

I. Gómez ,
E. Diez ,
F. Domínguez-Adame  and
P. Orellana
I. Gómez
Affiliation:
Departamento de Física de Materiales, Universidad Complutense, E-20840 Madrid, Spain
E. Diez
Affiliation:
Departamento de Física de Materiales, Universidad Complutense, E-20840 Madrid, Spain
F. Domínguez-Adame
Affiliation:
Departamento de Física de Materiales, Universidad Complutense, E-20840 Madrid, Spain
P. Orellana
Affiliation:
Departamento de Física, Universidad Católiea del Norte, Casilla 1280, Antofagasta, Chile
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Abstract

The main aim of this work is to study electron scattering in imperfect semiconductor heterostruetures. The source of unintentional disorder is the interface roughness at the heterojunctions occurring during growth. In order to achieve this goal we solve numerically the two–dimensional Ben Daniel–Duke equation for the electron scattering problem. Our model assumes open boundary conditions along the growth direction and periodic ones parallel to the heterojunctions. We then compute the reflection and transmission matrices that govern channel mixing due to interface roughness scattering. The knowledge of the mixing matrices allow us to calculate the transmission coefficient in any heterostruc-ture made of wide gap semiconductors. As an example, we compute the transmission coefficient in resonant tunneling devices based on double-barrier structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.36.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Penner, U., Riicker, H., and Yassievich, I. N., Semicond. Sci. Technol. 13, 709 (1998).Google Scholar
2. Freilikher, V. D. and Gradeskul, S. A., Prog. Opt. 30, 137 (1991).Google Scholar
3. Henrickson, L. E., Hirakawa, K., Frey, J., and Ikoma, T., J. Appl. Phys. 71, 3883 (1992).Google Scholar