Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-15T06:42:48.513Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Spin Resonance Studies of Donors in Bulk and thin Film β3-SiC

Published online by Cambridge University Press:  21 February 2011

W. E. Carlos ,
J. A. Freitas Jr ,
J. C. Pazik ,
L. M. Ivanova ,
YU.M. Altaiskit  and
V. L. Zuev
W. E. Carlos
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
J. A. Freitas Jr
Affiliation:
Sachs Freeman Associates, Landover, MD 20785
J. C. Pazik
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375 Current address; Office of Naval Research, Arlington, VA 22217
L. M. Ivanova
Affiliation:
A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Moscow, Russia
YU.M. Altaiskit
Affiliation:
Kiev Polytechnic Institute, Kiev, Ukraine.
V. L. Zuev
Affiliation:
Kiev Polytechnic Institute, Kiev, Ukraine.
Get access

Abstract

We have investigated the electron spin resonance of donors in bulk and thin film β-SiC at T = 10K to 40K. In both, two donor spectra are resolved; a three line spectrum associated with nitrogen on the carbon site and a broader line of unidentified origin. The observable hyperfine splitting decreases with increasing temperature due to a small valley-orbit splitting, in qualitative agreement with photoluminescence results. The lineshape has a significant lorentzian character even at the lowest temperatures, indicating exchange interactions with residual conduction electrons, possibly from a shallower donor. We find a lower concentration of both donors in the bulk material and a different temperature dependence of the lineshape for the two samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 535
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Moore, W.J., J. Appl. Phys. 74, 1805 (1993).Google Scholar
2. Segall, B., Alterovitz, S.A., Haugland, E.J., and Matus, L.G., Appl. Phys. Lett. 49, 584 (1986).Google Scholar
3. Dean, P.J., Choyke, W.J. and Patrick, L., J. Lumin 16, 299 (1977).Google Scholar
4. Freitas, J.A. Jr,., Bishop, S.G., Adamiano, A., Klein, P.H., Kim, H.J. and Davis, R.F. in Proceedings of the Materials Research Society Symposia, edited by Johnson, N.M., Bishop, S.G. and Watkins, G.D. (Materials Research Society, Pittsburgh, PA, 1985), Vol. 46, p. 581.Google Scholar
5. Moore, W.J., Lin-Chung, Pj., Freitas, J.A. Jr., Altaiskii, Y.M., Zuev, V.L. and Ivanova, L.M., Phys. Rev. B 48, 12289 (1993).Google Scholar
6. Pazik, J.C., Kelner, G. and Bottka, N., Appl. Phys. Lett. 58, 1419 (1991).Google Scholar
7. Pletyushkin, A.A., Ivanova, L.M. and Sultanova, T.N., Inorg. Mater. (USSR) 16, 966 (1980).Google Scholar
8. Roth, L.M., Phys. Rev. 118, 1534 (1960)Google Scholar
9. Humphreys, R.G., Bimderg, D. and Choyke, W.J., J. Phys. Soc. Jpn. 49 Suppl. A, 519 (1980).Google Scholar
10. Li, Yuan and Lin-Chung, P.J., Phys. Rev. B 36, 1130 (1987).Google Scholar
11. Kaplan, R., Wagner, R.J., Kim, H.J. and Davis, R.F., Solid State Commun. 56, 67 (1985).Google Scholar
12. Kohn, W. and Luttinger, J.M., Phys. Rev. 97, 883 (1955).Google Scholar
13. Alexander, Michael N., Phys. Rev. 172, 331 (1968).Google Scholar
14. Shulman, R.G. and Wyluda, B.J., Phys. Rev. 103, 1127 (1956).Google Scholar
13. Feher, G., Phys. Rev. 114, 1219 (1959).Google Scholar
14. Lépine, Daniel J., Phys. Rev. B 2, 2429 (1970).Google Scholar