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Electron Time-of-Flight Measurements in Porous Silicon

Published online by Cambridge University Press:  15 February 2011

Prasanna Rao ,
E. A. Schiff ,
L. Tsybeskov  and
P. M. Fauchet
Prasanna Rao
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 13244–1130
E. A. Schiff
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 13244–1130
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester NY 14627
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Abstract

Transient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α≈ 0.5. The range of mobilities is 10−5 − 10−4 cm2Vs between 225 K amd 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 613
Copyright
Copyright © Materials Research Society 1997

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