Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-10T20:07:50.344Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Transport Properties of InN

Published online by Cambridge University Press:  01 February 2011

Rebecca E. Jones ,
Henricus C. M. van Genuchten ,
Sonny X. Li ,
Leon Hsu ,
Kin Man Yu ,
Wladek Walukiewicz ,
Joel W. Ager III ,
Eugene E. Haller ,
Hai Lu  and
William J. Schaff
Rebecca E. Jones
Affiliation:
beccaj@berkeley.edu, University of California-Berkeley, Materials Science, 1 Cyclotron Road, MS 02R200, Berkeley, CA, 94720, United States
Henricus C. M. van Genuchten
Affiliation:
HCMvanGenuchten@lbl.gov, Lawrence Berkeley National Laboratory, Materials Sciences Division
Sonny X. Li
Affiliation:
xli@lbl.gov
Leon Hsu
Affiliation:
lhsu@umn.edu
Kin Man Yu
Affiliation:
kmyu@lbl.gov
Wladek Walukiewicz
Affiliation:
w_walukiewicz@lbl.gov
Joel W. Ager III
Affiliation:
jwager@lbl.gov
Eugene E. Haller
Affiliation:
eehaller@lbl.gov
Hai Lu
Affiliation:
wjs2@cornell.edu
William J. Schaff
Affiliation:
wjs2@cornell.edu
Get access

Abstract

High-energy particle irradiation has been used to control the free electron concentration and electron mobility in InN by introducing native point defects that act as donors. A direct comparison between theoretical calculations and the experimental electron mobility suggests that scattering by triply-charged donor defects limits the mobility in irradiated samples across the entire range of electron concentrations studied. Thermal annealing of irradiated films in the temperature range 425°C to 475°C results in large increases in the electron mobility that approach the values predicted for singly-ionized donor defect scattering. It is suggested that the radiation-induced donor defects are stable, singly-charged nitrogen vacancies, and triply-charged, relaxed indium vacancy complexes that are removed by the annealing.

Keywords

annealingelectrical propertiesradiation effects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF06-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Wu, J., Walukiewicz, W., Li, S. X., Armitage, R., Ho, J. C., Weber, E. R., Haller, E. E., Lu, H., Schaff, W. J., Barcz, A., and Jakiela, R., Appl. Phys. Lett. 84, 2805 (2004).Google Scholar
[2] Walukiewicz, W., Physica B, 302, 123 (2001).CrossRefGoogle Scholar
[3] Wu, J., Walukiewicz, W., Yu, K. M., Shan, W., and Ager, J. W. III, Haller, E. E., Lu, H. and Schaff, W. J., Metzger, W. K., and Kurtz, S., J. Appl. Phys. 94, 6477 (2003).CrossRefGoogle Scholar
[4] Li, S.X., Yu, K.M., Wu, J., Jones, R.E., Walukiewicz, W., Ager, J.W. III, Shan, W., Haller, E.E., Lu, H., and Schaff, W. J., Phys. Rev. B 71 (16), 161201 (2005).CrossRefGoogle Scholar
[5] Jones, R. E., Li, S. X., Hsu, L., Yu, K. M., Walukiewicz, W., Liliental-Weber, Z., Ager, J. W. III, Haller, E. E., Lu, H. and Schaff, W. J., Physica B (accepted for publication).Google Scholar
[6] Lu, H., Schaff, W. J., Eastman, L. F., and Wood, C., Mat. Res. Soc. Symp. Proc. 693, I1.5 (2002).Google Scholar
[7] Kane, E. O., J. Phys. Chem. Sol. 1 249 (1957).CrossRefGoogle Scholar
[8] Zawadzki, W. and Szymanska, W., Phys. Stat. Sol. (b) 45, 415 (1971).CrossRefGoogle Scholar
[9] Davydov, V. Y. and Klochikhin, A. A., Semiconductors 38, 897 (2004).Google Scholar
[10] Inushima, T., Higashiwaki, M., Matsui, T., Phys. Rev. B 68, 235204 (2003).CrossRefGoogle Scholar
[11] Persson, C., Ahuja, R., Ferreira da Silva, A., and Johansson, R., J. Phys.: Condens. Matter 13, 8945 (2001).Google Scholar
[12] http://www.srim.org/ Google Scholar
[13] Denlinger, J. et al. , unpublished.Google Scholar
[14] Stampfl, C., Van de Walle, C. G., Vogel, D., Kruger, P., and Pollman, J., Phys. Rev. B 61, R7846 (2000).CrossRefGoogle Scholar