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Electronic and Optical Properties of the Group-III Nitrides, their Heterostructures and Alloys

Published online by Cambridge University Press:  21 February 2011

Walter R. L. Lambrecht ,
Kwiseon Kim ,
Sergey N. Rashkeev  and
B. Segall
Walter R. L. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, Oh 44106-7079
Kwiseon Kim
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, Oh 44106-7079
Sergey N. Rashkeev
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, Oh 44106-7079
B. Segall
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, Oh 44106-7079
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Abstract

Various aspects of the electronic structure of the group III nitrides are discussed. The relation between band structures and optical response in the vacuum ultraviolet is analyzed for zincblende and wurtzite GaN and for wurtzite A1N and compared with available experimental data obtained from reflectivity and spectroscopic ellipsometry. The spin-orbit and crystal field splittings of the valence band edges and their relations to exciton fine structure are discussed including substrate induced biaxial strain effects. The band-offsets between the III-nitrides and some relevant semiconductor substrates obtained within the dielectric midgap energy model are presented and strain effects which may alter these values are discussed. The importance of lattice mismatch in bandgap bowing is exemplified by comparing AlxGa1−xN and InxGa1−xN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 455
Copyright
Copyright © Materials Research Society 1996

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References

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