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Electronic Properties of Nitrogen Delta-Doped Silicon Carbide Layers

Published online by Cambridge University Press:  21 March 2011

Toshiya Yokogawa ,
Kunimasa Takahashi ,
Takeshi Uenoyama ,
Osamu Kusumoto ,
Masao Uchida  and
Makoto Kitabatake
Toshiya Yokogawa
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co. Ltd., Hikaridai 3-4, Seika-cho, Kyoto 619-0237, Japan.
Kunimasa Takahashi
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co. Ltd., Hikaridai 3-4, Seika-cho, Kyoto 619-0237, Japan.
Takeshi Uenoyama
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co. Ltd., Hikaridai 3-4, Seika-cho, Kyoto 619-0237, Japan.
Osamu Kusumoto
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co. Ltd., Hikaridai 3-4, Seika-cho, Kyoto 619-0237, Japan.
Masao Uchida
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co. Ltd., Hikaridai 3-4, Seika-cho, Kyoto 619-0237, Japan.
Makoto Kitabatake
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co. Ltd., Hikaridai 3-4, Seika-cho, Kyoto 619-0237, Japan.
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Abstract

Nitrogen delta-doped silicon carbide (SiC) layers were grown by a new pulse doping method in a chemical vapor deposition. Doping distribution with high peak concentration (1.×1018 cm−3) and narrow distribution width (12 nm) was fabricated in the nitrogen delta-doped structure of SiC. Mobility enhancement due to spatial separation of electrons and their ionized parent donors was observed for the delta-doped structure. Metal-semiconductor field-effect transistors with a nitrogen delta-doped channel and a recess gate structure were fabricated. The devices had large source-drain breakdown voltages, high drain current capability and easy control of the threshold voltage with a good pinch-off characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H2.5
Copyright
Copyright © Materials Research Society 2001

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References

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