Hostname: page-component-6bf8c574d5-b4m5d Total loading time: 0 Render date: 2025-02-22T22:59:15.071Z Has data issue: false hasContentIssue false
  • English
  • Français

The Electronic Structure of the “0.15 eV” Cu Acceptor Level in GaAs

Published online by Cambridge University Press:  25 February 2011

E. Janzén ,
M. Linnarsson ,
B. Monemar  and
M. Kleverman
E. Janzén
Affiliation:
Linköping University, Dept. of Physics and Measurement Technology S-58l 83 LINKOPING, Sweden
M. Linnarsson
Affiliation:
Linköping University, Dept. of Physics and Measurement Technology S-58l 83 LINKOPING, Sweden
B. Monemar
Affiliation:
Linköping University, Dept. of Physics and Measurement Technology S-58l 83 LINKOPING, Sweden
M. Kleverman
Affiliation:
Dept. of Solid State Physics, University of Lund, S-22l 00 LUND, Sweden
Get access

Abstract

Cu diffused GaAs samples have been investigated using different kinds of FΠR techniques and photoluminescence. The results suggest that tne “0.15 eV” level originates from the ioruzation of a neutral, nearly substitutional Cu acceptor at a Ga site. Furthermore, the results indicate a distortion in the [100] direction. The ground state binding energy obtained from the effective-mass-like excited states is 157.8 meV at 6K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 169
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hall, R.N. and Racette, J.H., J. Appl. Phys. 35,379 (1964)Google Scholar
2 Kullendorff, N., Jansson, L. and Ledebo, L-Å., J. Appl. Phys. 54,3203 (1983)Google Scholar
3 Monemar, B., Gislason, H.P. and Wang, Z.G., Phys. Rev. B31, 7919 (1985)Google Scholar
4 Wang, Z.G., Gislason, H.P. and Monemar, B., J. Appl. Phys. 58,230 (1985)Google Scholar
5 Gislason, H.P., Monemar, B., Wang, Z.G.,Uihlein, Ch. and Liu, P.L., Phys. Rev. B32, 3723(1985)Google Scholar
6 Willmann, F., Blätte, M., Queisser, H.J. and Treusch, J., Solid State Commun. 9,2281 (1971)Google Scholar
7 Averkiev, N.S., Ashirov, T.K. and Gutkin, A. A., Sov. Phys. Semicond. 15,1145 (1981).Google Scholar
8 Averkiev, N.S., Ashirov, T.K. and Gutkin, A.A., Sov. Phys. Solid State 24,1168 (1982)Google Scholar
9 Averkiev, N.S., Ashirov, T.K. and Gutkin, A.A., Sov. Phys. Semicond. 17,61 (1983)Google Scholar
10 Averkiev, N.S., Vetrov, V.A., Gutkin, A.A., Merkulov, I.A., Nikitin, L.P., Reshina, I.I. and Romanov, N.G., Sov. Phys. Semicond. 20,1014 (1986)Google Scholar
11 Averkiev, N.S., Gutkin, A.A., Osipov, E. B. and Sedov, V. E., Sov. Phys. Semicond. 21, 258(1987)Google Scholar
12 Averkiev, N.S., Adamiya, Z.A., Aladashvili, D.J., Ashirov, T.K., Gutkin, A.A., Osipov, E.B. and Sedov, V.E., Sov. Phys. Semicond. 21,262 (1987)Google Scholar
13 Averkiev, N.S., Gutkin, A.A., Osipov, E.B., Sedov, V.E. and Tsatsulnikov, A.F., Sov. Phvs. Solid State 30,841 (1988)Google Scholar
14 Samuelson, L., Nilsson, S., Wang, Z-G. and Grimmeiss, H.G., Phys. Rev. Lett. 53,1501 (1984)Google Scholar
15 Delerue, G., Allan, G. and Lannoo, M., Proceedings of the 14th International Conference on Defects in Semiconductors; edited by H.S. von Bardeleben (Trans Tech, Aedermansdorf, Switzerland, 1986), Vols. 10–12, p. 37.Google Scholar
16 Delerue, C., Lannoo, M. and Allan, G., Phys. Rev. B39,1669 (1989).Google Scholar
17 Hemstreet, L.A., Phys. Rev. B22,4590 (1980).Google Scholar
18 Kleverman, M., Janzén, E., Linnarsson, M., and Monemar, B., at this conference.Google Scholar
19 The value was obtained by interpolating the data of Ref. 20 using the valence-band Parameters of Refs. 21 and 22.Google Scholar
20 Said, M., Kanehisa, M.A., Balkanski, M. and Saad, Y., Phys. Rev. B35,687 (1987)Google Scholar
21 Baldereschi, A. and Lipari, N.O., Phys. Rev. B8,2697 (1973)Google Scholar
22 Baldereschi, A. and Lipari, N.O., Phys. Rev. B9,1525 (1974)Google Scholar
23 Morgan, T. N., Phys. Rev. Lett. 24,887 (1979)Google Scholar