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Electronic Structures of Shallow Acceptors Confined in Si/SiGe Quantum Well Structures

Published online by Cambridge University Press:  10 February 2011

Q.X. Zhao  and
M. Willander
Q.X. Zhao
Affiliation:
Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden
M. Willander
Affiliation:
Physical Electronics and Photonics, Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden
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Abstract

Energy levels of the shallow acceptor states have been calculated for center-doped Si/Si1−xGex/Si quantum wells (QWs). The impurity states were calculated using an effective-mass theory that accounts for valence-band mixing as well as the mismatch of band parameters and dielectric constants between well and barrier materials. Acceptor binding energies and splitting between the acceptor 1S3/2(Γ7) and 1S3/2(Γ6) ground states were studied at various Ge concentrations and well widths. The results are discussed in comparison with the recent experimental data from the lateral transport measurements in boron-doped Si/SiGe quantum wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 273
Copyright
Copyright © Materials Research Society 2000

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