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Electronic Transport and Doping Effects in Reduced Graphene Oxide Measured by Scanning Probe Microscopy

Published online by Cambridge University Press:  10 April 2013

Christopher E. Kehayias
Affiliation:
Department of Physics and Astronomy, and Center for Nanoscopic Physics, Tufts University, 4 Colby Street, Medford, MA, 02155, U.S.A.
Samuel MacNaughton
Affiliation:
Department of Electrical and Computer Engineering, Tufts University, 161 College Avenue, Medford, MA, 02155, U.S.A
Sameer Sonkusale
Affiliation:
Department of Electrical and Computer Engineering, Tufts University, 161 College Avenue, Medford, MA, 02155, U.S.A
Cristian Staii
Affiliation:
Department of Physics and Astronomy, and Center for Nanoscopic Physics, Tufts University, 4 Colby Street, Medford, MA, 02155, U.S.A.
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Abstract

We present a Scanning Probe Microscopy study of doping and sensing properties of reduced graphene oxide (rGO)-based nanosensors. rGO devices are created by dielectrophoretic assembly of rGO platelets onto interdigitated electrode arrays, which are lithographically pre-patterned on top of SiO2/Si wafers. The availability of several types of oxygen functional groups allows rGO to interact with a wide range of organic dopants, including methanol, ethanol, acetone, and ammonia. We perform sensitive Scanning Kelvin Probe Microscopy (SKPM) measurements on patterned rGO electronic circuits and show that the local electrical potential and charge distribution are significantly changed when the device is exposed to organic dopants. We also demonstrate that SKPM experiments allow us to quantify the amount of charge transferred to the sensor during chemical doping, and to spatially resolve the active sites of the sensor where the doping process takes place.

Type
Articles
Copyright
Copyright © Materials Research Society 2013

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References

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