Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-02-05T21:29:03.403Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron-Phonon Scattering in GaN/AlN and GaAs/AlAs Quantum Wells

Published online by Cambridge University Press:  10 February 2011

T. F. Forbang  and
C. R. McIntyre
T. F. Forbang
Affiliation:
Institute for Computational Sciences and Informatics
C. R. McIntyre
Affiliation:
Department of Physics and Astronomy, MS 3F3 George Mason University, Fairfax, VA 22030
Get access

Abstract

We have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 599
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Strite, S. and Morkoc, H., J. Vac. Sci. & Tech., 10, 1237 (1992).Google Scholar
[2] Bhargava, R. N., Optoelectronics, 17 (1992).Google Scholar
[3] Boornstein, Landolt: Numerical Data and Functional Relationships in Science and Technology, edited by O. Madelung, vik 17 (1982).Google Scholar
[4] Demangeot, F., et al. in Phonon Dispersion in Gallium Nitride (IEEE Proc. of Semiconducting and Semi-Insulating Materials Conference, 1996) pp. 97–100.Google Scholar
[5] McIntyre, C. R. and Reinecke, T. L., Phys. Rev. B 56, 13428 (1997).Google Scholar