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Electroreflectance Spectra of InGaN/AlGaN/GaN p-n-Heterostructures

Published online by Cambridge University Press:  01 February 2011

Alexander E. Yunovich ,
Lev Avakyants ,
Mansur Badgutdinov ,
Pavel Bokov ,
Anatoly Chervyakov ,
Stanislav Shirokov ,
Elena Vasileva ,
Anatoly Feopentov ,
Fedor Snegov  and
Dmitry Bauman
...Show all authors
Alexander E. Yunovich
Affiliation:
yunovich@phys.msu.ru, M.V.Lomonosov Moscow State University, Dept. of Physics, Leninckie gory, Moscow, 119992, Russian Federation, (-7-495)-939-2994, (-7-495)-932-8820
Lev Avakyants
Affiliation:
avakants@genphys.phys.msu.ru, M.V.Lomonosov Moscow State University, Dept. of Physics, Leninskie gory, Moscow, 119992, Russian Federation
Mansur Badgutdinov
Affiliation:
mansurbadgutdinov@googlemail.com, M.V.Lomonosov Moscow State University, Dept. of Physics, Leninskie gory, Moscow, 119992, Russian Federation
Pavel Bokov
Affiliation:
bokov@genphys.phys.msu.ru, M.V.Lomonosov Moscow State University, Dept. of Physics, Leninskie gory, Moscow, 119992, Russian Federation
Anatoly Chervyakov
Affiliation:
acher@genphys.phys.msu.ru, M.V.Lomonosov Moscow State University, Dept. of Physics, Leninskie gory, Moscow, 119992, Russian Federation
Stanislav Shirokov
Affiliation:
stas.shirokov@gmail.com, M.V.Lomonosov Moscow State University, Dept. of Physics, Leninskie gory, Moscow, 119992, Russian Federation
Elena Vasileva
Affiliation:
vasileva@svetlana-o.spb.ru, “Svetlana-Optoelectroniks” JSC, Saint-Petersburg, 194156, Russian Federation
Anatoly Feopentov
Affiliation:
info@svetlana-o.spb.ru, “Svetlana-Optoelectroniks” JSC, Saint-Petersburg, 194156, Russian Federation
Fedor Snegov
Affiliation:
info@svetlana-o.spb.ru, “Svetlana-Optoelectroniks” JSC, Saint-Petersburg, 194156, Russian Federation
Dmitry Bauman
Affiliation:
bauman@svetlana-o.spb.ru, “Svetlana-Optoelectroniks” JSC, Saint-Petersburg, 194156, Russian Federation
Boris Yavich
Affiliation:
byavich@svetlana-o.spb.ru, “Svetlana-Optoelectroniks” JSC, Saint-Petersburg, 194156, Russian Federation
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Abstract

Electroreflectance (ER) spectra of InGaN/AlGaN/GaN p-n- heterostructures with multiple quantum wells (MQW) are studied. Structures with MQW InGaN/GaN were grown for blue LEDs by MOCVD technology and “flip-chip” mounted. The ER spectral maxima correspond to the high energy side of electroluminescence spectral line. The ER spectra caused by Franz-Keldysh effect are approximated by Aspnes theory. The ER spectra in a range 400 ÷ 800 nm have interference bands caused by the change of refraction index in the structure.

Keywords

III-Voptoelectronicpiezoelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-36
Copyright
Copyright © Materials Research Society 2007

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References

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