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The Enchanting Properties of Oxygen Atoms in Silicon

Published online by Cambridge University Press:  26 February 2011

M. Needels ,
J.D. Joannopoulos ,
Y. BAR-YAM ,
S.T. Pantelides  and
R.H. WOLFE
M. Needels
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
J.D. Joannopoulos
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
Y. BAR-YAM
Affiliation:
Department of Chemical Physics, Weizmann Institute of Science, Rehovot 76100, Israel
S.T. Pantelides
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
R.H. WOLFE
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Extract

In this paper we will present several new theoretical results on the properties of oxygen atoms in bulk crystalline silicon. Specifically, these properties will include (1) oxygen migration - where we will suggest that the conventional adiabatic-barrier model for oxygen migration may not be valid for this system; (2) oxygen catalysis - where we will demonstrate that certain oxygen configurations can act as “catalysts” to reactions that form silicon broken bond defects; and (3) oxygen aggregation - where we will introduce a new mechanism for the initial stages of aggregation and oxidation within the bulk of crystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 103
Copyright
Copyright © Materials Research Society 1991

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