No CrossRef data available.
Published online by Cambridge University Press: 26 February 2011
Energy relaxation rates for light holes in InGaAs/GaAs strained layer quantum wells are measured. Two techniques were used to measure light hole temperatures as a function of power dissipated in the hole gas. For Th < 20K, Shubnikov-de Haas oscillations were used and for Th> 20K, a photoluminescence technique was employed.