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Energy-Transfer Processes in Oxygen-Codoped GaAs:Er

Published online by Cambridge University Press:  10 February 2011

K. Takahei ,
R. A. Hogg  and
A. Taguchi
K. Takahei
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan. takahei@will.brl.ntt.jp
R. A. Hogg
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan. takahei@will.brl.ntt.jp
A. Taguchi
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan. takahei@will.brl.ntt.jp
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Abstract

GaAs grown by metalorganic chemical vapor deposition and codoped with Er and oxygen shows a simple spectrum with sharp luminescence lines due predominantly to one type of Er center. This center is identified as an Er atom substituting a Ga site, coupled with two oxygen atoms. Photoluminescence measurements under host excitation and photoluminescence excitation measurements that directly excite the 4f-shell of the Er3+ ion indicate that this center is excited much more efficiently than other Er centers simultaneously present in the same sample. A possible energy-transfer mechanism and its implications are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 267
Copyright
Copyright © Materials Research Society 1996

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References

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