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Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-melt Laser Anneal

Published online by Cambridge University Press:  01 February 2011

Simone Severi ,
Emmanuel Augendre ,
Bartek Pawlak ,
Pierre Eyben ,
Taiji Noda ,
Susan Felch ,
Annelies Falepin ,
Vijay Parihar ,
Robert Schreutelkamp  and
Wilfried Vandervorst
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Simone Severi
Affiliation:
severis@imec.be, IMEC, SPDT, Kapeldreef 75, Leuven, Belgium, 3001, Belgium, 003216283579
Emmanuel Augendre
Affiliation:
Augendre@imec.be, IMEC, Kapeldreef 75, Heverlee, B-3001, Belgium
Bartek Pawlak
Affiliation:
Pawlak@imec.be, Philips Research Leuven, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
Pierre Eyben
Affiliation:
Eyben@imec.be, IMEC, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
Taiji Noda
Affiliation:
Noda@imec.be, Matsushita Electric Industrial Co., Kyoto, N/A, N/A, Japan
Susan Felch
Affiliation:
Susan_Felch@amat.com, Applied Materials, Sunnyvale, CA, 94086, United States
Annelies Falepin
Affiliation:
Falepin@imec.be, IMEC, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
Vijay Parihar
Affiliation:
Vijay_Parihar@amat.com, Applied Materials, Sunnyvale, CA, 94086, United States
Robert Schreutelkamp
Affiliation:
Robert_Schreutelkamp@amat.com, Applied Materials, Sunnyvale, CA, 94086, United States
Wilfried Vandervorst
Affiliation:
Vandervorst@imec.be, IMEC, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
Kristin De Meyer
Affiliation:
Demeyer@imec.be, IMEC, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
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Abstract

The advantages of fluorine co-implantation on reducing the deep P junction profile is investigated and commented as a possible valuable solution for further scaling of the NMOS transistors spacer length. On PMOS transistors, Ge+C+B cocktail junctions lead to improved short channel effects control, S/D resistance and performance over the conventional approaches. Additional laser annealing induces a partial dissolution of the doping clusters in the junction and lower the S/D transistors resistance. A performance improvement is demonstrated both for NMOS and PMOS with cocktail junctions activated by spike RTA and additional laser annealing.

Keywords

Flaser annealingC
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C01-07
Copyright
Copyright © Materials Research Society 2006

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References

1 Lindsay, R. et al., IJWT 2004 Google Scholar
2 Severi, S. et al., IEDM 2004 Google Scholar
3 Shima, A. et al., IEEE Trans. Elect. Dev. 2005 Google Scholar
4 Jain, S. H. et al., IEEE Trans. Elect. Dev. 2005 Google Scholar
5 Pawlak, B. J. et al., submitted to Appl. Phys. Lett.Google Scholar
6 Pawlak, B. J. et al., submitted to Appl. Phys. Lett.Google Scholar
7 kottantharayil, A. et al., VLSI 2004 Google Scholar
8 Chong, Y. F. et al., IEEE Trans. Elect. Dev. 2004 Google Scholar
9 Pawlak, B. J. et al., submitted to MRS 2006 Google Scholar