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Enhanced Inp Substrate Protection for Lpe Growth of Ingaasp DH Lasers

Published online by Cambridge University Press:  15 February 2011

P. Besomi ,
R. B. Wilson ,
W. R. Wagner  and
R. J. Nelson
P. Besomi
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 07974
R. B. Wilson
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 07974
W. R. Wagner
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 07974
R. J. Nelson
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 07974
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Abstract

Thermal degradation of InP single crystal substrates prior to LPE growth has been virtually eliminated by using an improved protection technique. The phosphorus partial pressure provided by a Sn-In-P solution localized inside an external chamber surrounding the InP substrate prior to growth prevents thermal damage to the surface. Nomarski contrast photomicrographs,photoluminescence and X-ray diffractometric measurements indicate that InP substrates protected by this method suffer negligible deterioration, in contrast to the results of the more commonly used cover wafer method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 289
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

[1] Kressel, H. and Nelson, H., Physics of Thin Films, 7 (1973), 115.Google Scholar
[2] Antypas, G. A. and Moon, R. L., J. Electrochem. Soc., 120, (1973), 1574.Google Scholar
[3] Wrick, V., Scilla, G. J., Eastman, L. F., Henry, R. L. and Swiggard, E. M., Electron. Lett., 12 (1976), 394. Google Scholar
[4] Doi, A., Chinone, N., Aiki, K. and Ito, R., Appl. Phys. Letters, 34, (1979), 393.Google Scholar
[5] DiGuiseppe, M. A., Temkin, H. and Bonner, W. A., J. of Cryst. Growth, 58, 279, (1982).Google Scholar
[6] Clawson, A. R., Lum, W. Y. and McWilliams, G. W., J. of Cryst. Growth, 46,(1979), 300.Google Scholar
[7] Antypas, G. A., Appl. Phys. Lett., 37, (1980), 64.CrossRefGoogle Scholar
[8] Nelson, R. J., Appl. Phys. Letters, 35, (1979), 654.Google Scholar
[9] Pak, K. and Nishinaga, T., Jap. J. Appl. Phys., 18, (1979), 1859.Google Scholar
[10] Lourenco, J. A., unpublished.Google Scholar
[11] Casey, H. C. Jr. and Buehler, E., Appl. Phys. Letters, 30, (1977), 247.Google Scholar