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Epitaxial Crystallisation of Doped Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

R.G. Elliman ,
S.T. Johnson ,
K.T. Short  and
J.S. Williams
R.G. Elliman
Affiliation:
Joint Appointment with CSIRO, Division of Chemical Physics, Clayton 3168, Australia.
S.T. Johnson
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
K.T. Short
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
J.S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia
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Abstract

This paper outlines a model to account for the influence of doping and electronic processes on the solid phase epitaxial regrowth rate of ion implanted (100) silicon. In addition we present data which illustrates good quality epitaxial crystallisation of silicon at 400°C induced by He+ ion irradiation. We tentatively suggest that electronic energy-loss processes may be responsible for this behaviour.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 229
Copyright
Copyright © Materials Research Society 1984

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References

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