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Epitaxial Crystallization of Amorphous Silicon Layers under Ion Irradiation: Orientation Dependence

Published online by Cambridge University Press:  25 February 2011

D. M. Maher ,
R. G. Elliman ,
J. Linnros ,
J. S. Williams ,
R. V. Knoell  and
W. L. Brown
D. M. Maher
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974, USA
R. G. Elliman
Affiliation:
CSIRO Division of Material Science and Technology, Clayton 3168, Australia
J. Linnros
Affiliation:
CSIRO Division of Material Science and Technology, Clayton 3168, Australia
J. S. Williams
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia
R. V. Knoell
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974, USA
W. L. Brown
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974, USA
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Abstract

Ion-beam induced epitaxial crystallization of thin amorphous silicon layers at {100} and {110} crystalline/amorphous interfaces exhibits no orientation dependencies, whereas at a {111} crystalline/amorphous interface a weak orientation dependency relative to thermal-induced epitaxial crystallization is observed. This behavior supports an interpretation in which the thermal crystallization process is dominated by the need to form interfacial defects and/or growth sites and in the ion-beam experiment this formation process ocurrs athermally. It is thought that the observed orientation dependent regrowth on a {111} substrate relative to a {100} (or {110}) substrate is associated with the special correlated atomic sequencing which is believed to control solid-phase epitaxial crystallization at a {111) crystalline/amorphous interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 87
Copyright
Copyright © Materials Research Society 1987

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References

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