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Epitaxial Films of Faas and Fan on Fianit Substrates

Published online by Cambridge University Press:  10 February 2011

A. N. Buzynin ,
V. V. Osiko ,
E. E. Lomonova ,
Yu. N. Buzynin  and
A. S. Usikov
A. N. Buzynin
Affiliation:
General Physics Institute of Russian Academy of Sciences, 38 Vavilov st., Moscow 117942, Russia, mtourism@garnet.ru
V. V. Osiko
Affiliation:
General Physics Institute of Russian Academy of Sciences, 38 Vavilov st., Moscow 117942, Russia, mtourism@garnet.ru
E. E. Lomonova
Affiliation:
General Physics Institute of Russian Academy of Sciences, 38 Vavilov st., Moscow 117942, Russia, mtourism@garnet.ru
Yu. N. Buzynin
Affiliation:
Institute for Physics of Microstructures of RAS, 46 Ulianov st., Nyzhny Novgorod, 603600, Russia
A. S. Usikov
Affiliation:
Physico-Technical Institute of RAS, 26 Polytechnicheskaya st, 194021, Russia
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Abstract

Subrmicron heteroepitaxial GaAs and GaN films were grown by both conventional MOCVD and «capillary epitaxy» technique on (001) and (111) fianit (YSZ)substrates. A preliminary annealing of the substrates under vakuum was made in order to stabilize the surface by removing of some amount of oxygen. Conditions of single crystalline growth of GaAs submicron films (50–500nm) have been determined. The films had mirror-like surface morphology and high structural perfection. The distribution of Zr, O, Y across the film-substrate interface was sharp and doping impurities contents were uniform over the film. PL spectra of undoped GaN films on YSZ were studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 417
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Mercardalli, L. M., Diemegand, D., Crose, M., Siejka, Y.., Proc.Soc. Photo-Opt. Instrum. Eng. 623, 183, (1986).Google Scholar
[2] Manasevit, H. M., Goleski, I., Mondy, L. A., J.Electrochem. Soc. 130, 1752, (1983).Google Scholar
[3] Buzynin, A. N., Buzynin, Yu. N., Osiko, V. V., Lomonova, E. E. and Tatarintsev, V. M.., Abstr. 11 Intern. Conf. Cryst. Growth. (The Hague, The Netherlands, 1995) p. 333.Google Scholar
[4] Shengurov, V. G., Shabanov, V. N., Busynin, A. N. at el. Microelectronics, 6, 204, (1996).Google Scholar
[5]Soviet Union Patent N 1730872 (1992).Google Scholar
[6] Aleksandrov, V. I., Osiko, V. V., Prokhorov, A. M. and Tatarintsev, V. M.,. In Cur. Top. In Mat. Sci., Ed Kaldis, E. (North-Holland, Amsterdam, 1978), p.421.Google Scholar
[7]Soviet Union Patent N 1590027 (1991).Google Scholar
[8] Sheftal, N. N. and Buzynin, A. N., Vestnik Moscow Univ. 3, 102, (1972), Nat. Trans. Cent. The Yohn Crenan Library, 35w, 33rd St., Chicago IL 60616 USA.Google Scholar
[9] Hersee, S. D., Ramer, J. C., Malloy, K. J.. MRS Bulletin, July, 45 (1997)Google Scholar
[10] Belov, R. K., Varganov, A. V., Volodin, B. A. et al., Pisma v GTF (in Russion), 20, (1994), 1–5.Google Scholar