Hostname: page-component-6bf8c574d5-9nwgx Total loading time: 0 Render date: 2025-02-22T16:36:59.239Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Gold in Au/Si Eutectic Reaction and Epitaxial Aluminum Spikes in Al-1%Si/Ti-W/Si System

Published online by Cambridge University Press:  28 February 2011

Peng-Heng Chang
Peng-Heng Chang*
Affiliation:
Central Research Laboratories, Texas Instruments Inc., P. O. Box 655936, MS 132, Dallas, TX 75265
Get access

Abstract

Epitaxial regrowth of gold film on Si as a result of Au/Si eutectic reaction and epitaxial aluminum spikes forming at IC contacts during sintering have been investigated by transmission electron microscopy (TEM). For gold film on Si, three types of epitaxy were observed: (1) the crystal structures of the two lattices are exactly the same, (2) the two structures have the orientation relationship of Au(111)//Si(111) and Au[132]//Si[231] and (3) 20° misorientation from the relationship in (2). Two orientation relationships were observed in the case of Al spike in Si: (1) Al[011]//Si[123] and Al(200)//Si(11), (2) Al[001]//Si[112] and 2° misorientation between Al(200) and Si(111). Possible mechanisms are proposed to explained the observed epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 471
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ghate, P.B., Physics Today, 39, 58 (1986).CrossRefGoogle Scholar
2 Hoge, C.E and Thomas, S., Proc. IEEE Reliability Phys. Conf., 18, 301 (1980).Google Scholar
3 Fraser, D.B., in VLSI Technology, edited by Sze, S.M., (McGraw-Hill Book Co., New York, NY, 1983), p.347.Google Scholar
4 Chang, P.-H., Hawkin, R., Bonifield, T.D., and Melton, L.A., Appl. Phys. Lett., 52, 272 (1988).Google Scholar
5 Chang, P.-H., Berman, G., and Shen, C.C., J. Appl. Phys., 63, 1473 (1988).Google Scholar
6 Chang, P.-H., Coviello, M.D., and Scott, A.F., Mater. Res. Soc. Symp. Proc., 115, (1988) in press.Google Scholar
7 Calliari, L., Sancrotti, M., and Braicovich, L., Phys. Rev. B30, 4885 (1984).Google Scholar
8 Tu, K.N. and Mayer, J.W., in Thin Films--Interdiffusion and Reaction, edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Wiley, New York, 1978), p. 396.Google Scholar
9 Chang, P.-H.. Liu, H.-Y., Keenan, J.A., Anthony, J.M., and Bohlman, J.G., J. Appl. Phys. 62, 2485 (1987).CrossRefGoogle Scholar
10 Sloope, B.W. and Tiller, C.O., Appl. Phys. Lett., 8, 223 (1966)Google Scholar
11 LeGoues, F.K., Krakow, W., and Ho, P.S., Mater. Res. Soc. Symp. Proc., 37, 395 (1985).Google Scholar
12 Palmstrom, Yamada C.J., Kennedy, E., Mayer, J.W., Inokawa, H., and Takagi, T., Mater. Res. Soc. Symp. Proc., 37, 401 (1985).Google Scholar