Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-10T08:49:04.663Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth OF (001)- and (111)-Oriented PTMNSB Films and Multilayers

Published online by Cambridge University Press:  15 February 2011

M.C. Kautzky  and
B.M. Clemens
M.C. Kautzky
Affiliation:
Dept. of Materials Science and Engineering, Stanford University Stanford, CA 94305-2205
B.M. Clemens
Affiliation:
Dept. of Materials Science and Engineering, Stanford University Stanford, CA 94305-2205
Get access

Abstract

In this paper we report the successful growth of single-phase epitaxial PtMnSb films and multilayers by dc magnetron cosputtering, both in the (001) orientation on MgO(001) and W(001), and in the (111) orientation on Al2O3 (0001). Single-layer films in the thickness range 50Å≤t≤1000Å were grown and characterized using x-ray diffraction (XRD), magneto-optic Kerr effect (MOKE), and vibrating sample magnetometry (VSM). The in-plane orientation relationships, as determined by asymmetric XRD, were PtMnSb[100]∥MgO[110], PtMnSb[100]∥W[100], and PtMnSb[101∥Al2O3[2110]. The crystalline quality of the films was found to depend strongly upon the substrate, growth temperature, film thickness, and presence of a capping layer, but rocking curve widths of 1° or less were achieved on each substrate. Measurement of the in-plane strain showed that the films were almost entirely relaxed, with strains <1%. In-plane magnetization was observed in all cases, with moments and coercivities in the 400-500 emu/cm3 and 100-200 Oe ranges respectively. Polar Kerr spectra showed large rotations (0.75° - 1.03°), whose peak wavelengths appear to depend on both film structure and optical interference effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 384: Symposium L – Magnetic Ultrathin films, Multilayers and Surfaces , 1995 , 109
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Engen, P.G. van, Buschow, K.H.J., and Jongebreur, R., Appl. Phys. Lett. 42, 202 (1983).Google Scholar
2. Groot, R.A. de, Engen, P.G. van, and Buschow, K.H.J., Phys. Rev. B 50, 2024 (1983).Google Scholar
3. Park, C., private communication.Google Scholar
4. Kautzky, M.C. and Clemens, B.M., Appl. Phys. Lett. 66, 1279 (1995).Google Scholar
5. Laudise, R.A., Sunder, W.A., Barns, R.L., Kammlott, G.W., Witt, A.F., and Carlson, D.J., J. Cryst. Growth 102, 21 (1990).Google Scholar
6. Attaran, E. and Grundy, P.J., J. Magn. and Magn. Mtls. 78, 51 (1989).Google Scholar
7. Sugimoto, N., Inukai, T., Matsuoka, M., and Ono, K., Jap. J. Appl. Phys. 28, 1139 (1989).Google Scholar
8. Chen, L., McGahan, W., Sellmyer, D., and Woollam, J., J. Appl. Phys. 67, 7547 (1990).Google Scholar
9. Weaver, J.H., Lynch, D.W., and Olson, C.G., Phys. Rev. B 12, 1293 (1975).Google Scholar
10. Heide, P.M. van der, Baelde, W., Groot, R.A. de, Vrooment, A.R. de, Engen, P.G. van, and Buschow, K.J., J. Phys. F 15, L75 (1985).Google Scholar
11. Bains, G.S., Carey, R., and Thomas, B.W.J., J. Magn. and Magn. Mtls. 104–107, 1011 (1992).Google Scholar