Hostname: page-component-6bf8c574d5-qdpjg Total loading time: 0 Render date: 2025-02-22T16:43:30.229Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of Bi2Sr2CuO6 Thin Films on Single Crystal Surfaces.

Published online by Cambridge University Press:  21 February 2011

Takuya Matsumoto ,
Tomoji Kawai  and
Shichio Kawai
Takuya Matsumoto
Affiliation:
The Institute of Scientific and Industrial Research, Osaka Univ., 8–1 Mihogaoka, Ibaraki, Osaka 567, Japan.
Tomoji Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka Univ., 8–1 Mihogaoka, Ibaraki, Osaka 567, Japan.
Shichio Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka Univ., 8–1 Mihogaoka, Ibaraki, Osaka 567, Japan.
Get access

Abstract

Epitaxial growth of Bi2Sr2CuO6 thin films on a SrTiO3, a misoriented SrTiO3 and a Bi2Sr2CaCu2O8 single crystal have been performed using computer-controlled laser molecular beam epitaxy. On the SrTiO3 substrate, the 2201 films consist of two types of domains whose b-axes are perpendicular to each other. In contrast, the 2201 film on the 2212 single crystal has a complete single type of domains. Layer-by-layer growth with a half unit cell thickness of 2201 films is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 535
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shigaki, I., Kitahama, K., Shibutani, K., Hayashi, S., Ogawa, R., Kawate, Y., Kawai, T., Kawai, S., Matsumoto, M. and Shirafujl, J., Jpn. J. Appl. Phys, 29, L2013 (1990).Google Scholar
2. Gao, Y., Lee, P., Coppens, P., Subramanian, M.A. and Sleight, A.W., Science 241, 954 (1988):Google Scholar
Beskrovnyi, A.I., Dlouha, M., Jirak, Z., Vratislav, S. and Poliert, E., Physica C 166, 79 (1990):Google Scholar
Yamamoto, A., Onoda, M., Muromachi, E.T., Izumi, F., Ishigaki, T. and Asano, H., Phys. Rev. B 42, 4228 (1990).Google Scholar
3. Matsumoto, T., Kawai, T., Kitahama, K., Kawai, S., Shigaki, I. and Kawate, Y., Appl. Phys. Lett. 58, 2039 (1991).Google Scholar