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Epitaxial Growth of CdTe on (100) GaAs/Si and (111) GaAs/Si Substrates Using Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

G. Radhakrishnan ,
A. Nouhi  and
J. Katz
G. Radhakrishnan
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Dr., Pasadena, CA 91109
A. Nouhi
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Dr., Pasadena, CA 91109
J. Katz
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Dr., Pasadena, CA 91109
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Abstract

CdTe is a very important semiconductor with versatile applications extending from solar energy conversion to optoelectronics. In addition, both the close lattice match between CdTe and HgCdTe and the immunity of CdTe to autodoping of the HgCdTe make CdTe the substrate of choice for the growth of HgCdTe. However, CdTe is extremely difficult to grow and the nonavailability of good quality, large area, inexpensive, single crystal CdTe has slowed the development of HgCdTe detectors. Infrared device processing requires large areas of single crystal material and the problems associated with CdTe have called for alternative substrates for growing HgCdTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 333
Copyright
Copyright © Materials Research Society 1988

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References

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