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Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

Published online by Cambridge University Press:  25 February 2011

K. Nashimoto ,
D. K. Fork ,
F. A. Ponce  and
T. H. Geballe
K. Nashimoto
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304 Materials Research Laboratory, Fuji Xerox Co., Ltd., Minamiashigara, Kanagawa, 250-1, Japan
D. K. Fork
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304 Department of Applied Physics, Stanford University, CA 94305
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
T. H. Geballe
Affiliation:
Department of Applied Physics, Stanford University, CA 94305
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Abstract

Epitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 495
Copyright
Copyright © Materials Research Society 1992

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