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The Epitaxial Growth of Ge on Si(100) Using Te as a Surfactant

Published online by Cambridge University Press:  15 February 2011

X. Yango ,
R. Cao ,
J. Li ,
J. Terry ,
J. Wu  and
P. Pianetta
X. Yango
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center Department of Material Science and EngineeringStanford University, Stanford, CA 94309
R. Cao
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center
J. Li
Affiliation:
Department of Material Science and EngineeringStanford University, Stanford, CA 94309
J. Terry
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center
J. Wu
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center Department of Material Science and EngineeringStanford University, Stanford, CA 94309
P. Pianetta
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center
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Abstract

The epitaxial growth of Ge on Si using Te as a surfactant has been studied with high resolution photoemission, low energy electron diffraction and cross-sectional transmission electron microscopy. The growth mode of Ge on Si changed from Stranski-Krastanov (S-K) to layer-by-layer mode when 1/4 ML Te atoms were on the surface. During the growth, Te atoms segregated to the top of the surface. If the growth temperature is too high (above ∼450°C), the Te coverage was less than that necessary to keep the layer-by-layer growth, and the growth mode of Ge on Si is still S-K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 243
Copyright
Copyright © Materials Research Society 1993

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References

1. Bean, John C., Science 230, 127(1985).Google Scholar
2. People, R., IEEE Journal of Quantum Electronics, QE–22, 1696(1986).CrossRefGoogle Scholar
3. Copel, M., Reuter, M. C., Kaxiras, Efthimios, and Tromp, R. M., Phys. Rev. Lett. 63, 632(1989).CrossRefGoogle Scholar
4. LeGoues, F. K., Copel, M., and Tromp, R., Phys. Rev. B 42, 11690(1989).CrossRefGoogle Scholar
5. Tromp, R. M. and Reuter, M. C., Phys. Rev. Lett. 68, 632(1992).Google Scholar
6. Higuchi, Shinji and Nakanishi, Yasuo, Surf. Sci. 254, L465(1991)CrossRefGoogle Scholar
7. Yang, X., Cao, R., Terry, J., and Pianetta, P. in Chemical Surface Preparation. Passivation and Cleaning for Semiconductor Growth and Processing, edited by Nemanich, Robert J., Helms, C. Robert, Hirose, Masataka, and Rubloff, Gray W. (Mater. Res. Soc. Proc. 259, Pittsburgh, PA, 1992) pp. 455–460.Google Scholar
8. Cao, R., Yang, X., Terry, J. and Pianetta, P., Appl. Phys, Lett. 61, 2347 (1992).Google Scholar
9. Thornton, J. M. C., Williams, A. A., MacDonald, J. E., Silfhout, R. G. van, Veen, J. F. van der, Finney, M., and Norris, C., J. Vac. Sci. Technol. B 9, 2146 (1991).Google Scholar