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Epitaxial Growth of (Na,K)NbO3 Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  20 March 2013

K. Sakurai ,
T. Hanawa ,
N. Kikuchi ,
K. Nishio ,
K. Tonooka ,
R. Wang ,
H. Bando  and
H. Takashima
K. Sakurai
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JAPAN
T. Hanawa
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JAPAN
N. Kikuchi
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JAPAN
K. Nishio
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, JAPAN
K. Tonooka
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
R. Wang
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
H. Bando
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
H. Takashima
Affiliation:
National Institute of Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
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Abstract

(Na,K)NbO3 is a promising candidate for lead-free piezoelectric materials. (Na1-xKx)NbO3 films (x = 0.3–0.7) were epitaxially grown on a (100)SrTiO3 substrate via pulsed laser deposition. The effects of substrate temperature and oxygen pressure during deposition on the crystallinity of the films were examined: both parameters affected the mosaic spread of the crystallites and the formation of an impurity phase. In this study, the optimum conditions for the preparation of highly crystalline films were a substrate temperature of 800 °C and oxygen pressure of ∼60 Pa. The lattice constants parallel and perpendicular to the substrate surface responded differently to changes in x: the constant parallel to the surface increased with increasing x, while the constant perpendicular to the surface was maximized at x = 0.5. The difference in the dependence of the lattice constants could be explained by the elastic distortion of the lattice.

Keywords

laser ablationepitaxypiezoelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 227 - 232
Copyright
Copyright © Materials Research Society 2013 

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References

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