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Epitaxial growth of V2O3 on Al2O3 by reactive MBE

Published online by Cambridge University Press:  07 March 2011

Leander Dillemans ,
Tuan Tran ,
Md. Nurul Kabir Bhuiyan ,
Tomas Smets ,
Mariela Menghini ,
Ruben Lieten ,
Jin Won Seo  and
Jean-Pierre Locquet
Leander Dillemans
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Tuan Tran
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Md. Nurul Kabir Bhuiyan
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Tomas Smets
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Mariela Menghini
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Ruben Lieten
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
Jin Won Seo
Affiliation:
Department of Metallurgy and Materials Engineering, KU Leuven, Leuven, Belgium.
Jean-Pierre Locquet
Affiliation:
Department of Physics and Astronomy, KU Leuven, Leuven, Belgium
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Abstract

Vanadium oxides are strongly correlated electron systems that are interesting both from a fundamental scientific point of view and for possible future applications including memory and sensors. In this contribution, we report on the epitaxial growth of V2O3 thin films on c-Al2O3 (0001) with molecular beam epitaxy and atomic oxygen. We studied the influence of deposition rate and substrate temperature on the structural properties and the metal-insulator transition.

Keywords

molecular beam epitaxy (MBE)Vmetal-insulator transition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1292: Symposium K – Oxide Nanoelectronics , 2011 , mrsf10-1292-k02-01
Copyright
Copyright © Materials Research Society 2011

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References

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