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Epitaxial Growth on Simox Wafers

Published online by Cambridge University Press:  28 February 2011

Hon Wai Lam
Hon Wai Lam*
Affiliation:
LAM Associates, P. O. Box 742943. Dallas, TX 75374-2943
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Abstract

The top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin,less than 500 nm) and because of the material structure of the S1MOX wafer, special care has to.be exercised in order to obtain desirable epitaxial growth. This paper describes the unique problems of epitaxial growth on SIMOX.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 223
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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