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Epitaxial Nickel Disilicide Formation by Electron Beam Annealing

Published online by Cambridge University Press:  22 February 2011

R.E. Harper ,
E.A. Maydell-Ondrusz ,
I.H. Wilson  and
K.G. Stephens
R.E. Harper
Affiliation:
University Of Surrey, Guildford, Surrey, U.K.
E.A. Maydell-Ondrusz
Affiliation:
University Of Surrey, Guildford, Surrey, U.K.
I.H. Wilson
Affiliation:
University Of Surrey, Guildford, Surrey, U.K.
K.G. Stephens
Affiliation:
University Of Surrey, Guildford, Surrey, U.K.
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Abstract

A multiply-scanned electron beam was used to form nickel silicides from thin nickel films on unimplanted and arsenic implanted silicon (100) substrates. Films of thickness 300, 660 and 1000Å were annealed using a power density of 7.9Wcm−2 and irradiation times of 5 to 150 secs.

Rutherford backscattering and channelling techniques were used to determine the stoichiometry, thickness and epitaxial quality of the annealed films. The thinnest gave a Xminof ∼ 18% and the thickest a Xmin of ∼ 40%. Resistivities were measured by the four-probe technique. Chemical composition was determined by X-ray and glancing angle electron diffraction (RHEED). Transmission electron microscopy (TEM) was used to estimate grain size of the disilicide phase and scanning electron microscopy (SEM) to study surface textures. The effect of arsenic implantation on growth rate, epitaxial quality and surface texture is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 105
Copyright
Copyright © Materials Research Society 1984

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References

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