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Epitaxial Regrowth of a-GaAs/(100) Silicon By Excimer Laser Annealing at 248 nm

Published online by Cambridge University Press:  28 February 2011

A. Christou ,
T. Efthimiopoulos ,
G. Kyriakidis  and
C. Varmazis
A. Christou
Affiliation:
Research Center of Crete, Heraklion, Crete, Greece and University of Crete, Physics Department.
T. Efthimiopoulos
Affiliation:
Research Center of Crete, Heraklion, Crete, Greece and University of Crete, Physics Department.
G. Kyriakidis
Affiliation:
Research Center of Crete, Heraklion, Crete, Greece and University of Crete, Physics Department.
C. Varmazis
Affiliation:
Research Center of Crete, Heraklion, Crete, Greece and University of Crete, Physics Department.
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Abstract

Excimer laser annealing at 248 nm has resulted in the recrystallization of a-GaAs on (100) silicon. An AlAs encapsulation layer was found to be necessary to prevent the loss of arsenic during laser annealing. An energy density of 105 mJ/cm2 was the critical energy density which gave optimum results. Field effect transistors were fabricated on the regrown (100) GaAs utilizing ion implantation for the n-type channel, and resulted in a transconductance of 70–80 mS/mm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 187
Copyright
Copyright © Materials Research Society 1986

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References

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