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EPR Investigation of Defects in Boron Nitride thin Films

Published online by Cambridge University Press:  25 February 2011

M. Fanciulli  and
T. D. Moustakas
M. Fanciulli
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
T. D. Moustakas
Affiliation:
Department of Electrical Engineering and Department of Physics, Boston University, Boston MA 02215.
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Abstract

Defects in BN thin films, produced by reactive sputtering, were investigated by Electron Paramagnetic Resonance (EPR) measurements. The EPR signals of films produced with up to 10% N2 in the argon discharge are consistent with films having a cubic structure, and becoming more ordered with nitrogen incorporation in the films. The concentration of spins is in the order of 1019 spins/g and they are attributed to nitrogen vacancies with an electron trapped in. Carbon incorporation changes the EPR signal and increases the concentration of spins significantly. This result is consistent with the notion that carbon doping stabilizes the electron in a nitrogen vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 605
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Wentorf, R. H. Jr, J. Chem. Phys., 36, 1990 (1961)Google Scholar
2. Sokolowky, M., J. Crystal Growth, 46, 136 (1979)CrossRefGoogle Scholar
3. Bar-Yam, Y. and Moustakas, T. D., Nature, 342, 786 (1989)CrossRefGoogle Scholar
4. Bar-Yam, Y. and Moustakas, T. D., Mat. Res. Soc. Symp. Proc, 162, 201 (1990)Google Scholar
5. Vlasova, M. V., Kakazei, N. G. and Savvakin, G. I., Izv. Akad. Nauk SSSR, Neorg. Mater., 16, 2160 (1980)Google Scholar
6. Shipilo, V. B., Rud', A. E., Leushkina, G. V., Kuz'min, V. S. and Ugolev, I. I., Izv. Akad. Nauk SSSR, Neorg. Mater., 23, 1993 (1987)Google Scholar
7. Geist, D. and Romelt, G., Solid State Comm., 2, 149 (1964)CrossRefGoogle Scholar
8. Romelt, G., Z. Naturforschg., 21a, 1970 (1966)Google Scholar
9. Khusidman, M. B. and Neshpor, V. S., Zh. Eksp. Teor. Khim., 3, 270 (1967)Google Scholar
10. Romelt, G., in Lattice Defects in semiconductors, Tokyo 407 (1966)Google Scholar
11. Khusidman, M. B. and Neshpor, V. S., Soviet Physics Solid State, 10, 975 (1968)Google Scholar
12. Moore, A. W. and Singer, L.S., J. Phys. Chem. Solids, 33, 343 (1972)CrossRefGoogle Scholar
13. Katzir, A., Suss, J. T., Zunger, A., Halperin, A., Phys. Rev. B, 11, 2370 (1975)Google Scholar
14. Zunger, A. and Katzir, A., Phys. Rev. B, 11, 2378 (1975)CrossRefGoogle Scholar
15. Andrei, E. Y., Katzir, A. and Suss, J. T., Phys. Rev. B, 13, 2831 (1976)Google Scholar
16. Geist, D. in Boron and refractory borides, p. 65, Springer (1977)CrossRefGoogle Scholar
17. Shipilo, V. B., Rud', A. E., Leushkina, G. V., Kuz'min, V. S. and Ugolev, I. I., Izv. Akad. Nauk SSSR, Neorg. Mater., 24, 1303 (1988)Google Scholar
18. Tikhonenko, K. A., Shul'man, L. A. and Gerasimenko, V. K., in Effects of High Pressure on Material Properties and Structures (in Russian), Izd. ISM AN Ukr. SSR, Kiev 29, (1983)Google Scholar
19. Shul'man, L. A. and Tikhonenko, K. A., Ukr. Fiz. Zh., 30, 578 (1985) (in Russian)Google Scholar
20. Zhang, F. and Chen, G., This VolumeGoogle Scholar
21. Moustakas, T. D., Molnar, R., Lei, T. and Oles, E. J., This volumeGoogle Scholar
22. Wiggins, M. D., Aita, C. R. and Hickernell, F. S., J. Vac. Sci. Technoi, A2(2), 322 (1984)Google Scholar
23. Fermi, E., Z. Phys., 60, 320 (1930)Google Scholar
24. Van Vleck, J. H., Phys. Rev., 74, 1168 (1948)Google Scholar
25. Poole, C. P., Electron Spin Resonance, John Wiley, (1983 2nd ed.)Google Scholar