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ESR Of Graphite-Like Amorphous Carbon Thin Film In The 20 – 340 K Temperature Range

Published online by Cambridge University Press:  26 February 2011

Gustavo A. Viana  and
Francisco C. Marques
Gustavo A. Viana
Affiliation:
gviana@ifi.unicamp.br, UNICAMP, Instituto de Física Gleb Wataghin, Cidade Universitária Zeferino Vaz, 13083-970 - Campinas, 6165, Brazil>
Francisco C. Marques
Affiliation:
marques@ifi.unicamp.br, UNICAMP, Instituto de Física Gleb Wataghin, Cidade Universitária Zeferino Vaz, 13083-970 - Campinas, 6165, Brazil
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Abstract

Electron spin resonance of graphite-like a-C thin films is investigated in the 20 K up to 340 K temperature range. The films with sp2 concentration of about 90 % (determined by electron energy loss spectroscopy), with no measurable optical band gap, were prepared by ion beam assisted sputtering. The results revealed an unexpected low density of paramagnetic centers, ascribed to itinerant states (conduction electrons) and not to localized states usually reported for a-C with band gap higher than 1.0 eV.

Keywords

amorphouselectron spin resonanceC
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 984: Symposium MM – Magnetic Resonance in Material Science , 2006 , 0984-MM15-01
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Sjöström, H., Stafström, S., Bowman, M. and Sundgren, J. E., Phys. Rev. Lett. 75, 1336 (1995).Google Scholar
2. Kim, E., Chen, C., Köhler, T., Elstner, M. and Frauenheim, T., Phys. Rev. Lett. 86, 652 (2001).Google Scholar
3. Teter, D. M. and Hemley, R. J., Science 271, 53 (1996).Google Scholar
4. Liu, A. Y. and Wentzcovitch, R. M., Phys. Rev. B 50, 10362 (1994).Google Scholar
5. Dutta, U., Chatterjee, P.; J. Appl. Phys. 96(4): 2261–2271 (2004).Google Scholar
6. Ganguly, G., Carlson, D.E., Hegedus, S.S., et al; Appl. Phys. Lett. 85(3): 479–481 (2004).Google Scholar
7. Anderson, P. W., Phys. Rev. 109, 1492 (1958).Google Scholar
8. Hong, S. J., Lee, S., Park, J. B., et al; Appl. Phys. Lett. 83(16): 3419–3421 (2003).Google Scholar
9. Barklie, R.C., Diam. Rel. Mater. 10 (2001) 174–181.Google Scholar
10. Oliveira, M. H. Jr, Barbieri, P. F., Lacerda, R. G. and Marques, F. C., Thin Solid Films 469–470, pp. 112–114 (2004).Google Scholar
11. Jones, B. J., Barklie, R. C., Smith, G., Mkami, H. El et al., Diam. Rel. Mater. 12, 116 (2003).Google Scholar
12. Bardeleben, H. J., Cantin, J. L., Zellama, K. and Zeinert, A., Diam. Rel. Mater. 12, 124 (2003).Google Scholar
13. Abragam, A., Bleaney, B., EPR of transitions Ions, Clarendon Press, Oxford, (1970).Google Scholar
14. Taylor, R. H., Adv. Phys. 24, 681 (1975).Google Scholar
15. Barnes, S. E., Adv. Phys. 30, 801 (1981).Google Scholar
16. Sercheli, M. S., Kopelevich, Y., Silva, R. R., Torres, J. H. S. and Rettori, C., Sol. Stat. Comm. 121, 579 (2002).Google Scholar