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Estimation of Surface Diffusion Length from AFM Images of Faceted GaAs(111) Homoepitaxial Films

Published online by Cambridge University Press:  25 February 2011

K. Yang ,
L. J. Schowalter  and
T. G. Thundat
K. Yang
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
L. J. Schowalter
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
T. G. Thundat
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

GaAs films grown on exact (111) substrates in the reconstruction regime always show facets. We have studied the surfaces of these films with an atomic force microscope. The facets are composed of vicinal surfaces which are tilted by small angles (∼ 2°) from the exact (111) plane. From the geometry of the facet, average displacement of adatoms is calculated. The results indicate that the diffusion length under the growth condition is more than 0.2 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 143
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Smith, D. L., Solid State Comrnun. 57, 919 (1986);Google Scholar
Mailoit, C. and Smith, D. L., Phys. Rev. B 35, 1242 (1987).Google Scholar
2. Cho, A. Y., J. Appl. Phys. 41, 2780 (1970).Google Scholar
3. Biegelsen, D. K., Bringans, R. D., Northrup, J. E., and Swartz, L.-E., Phys. Rev. Lett. 65, 452 (1990).CrossRefGoogle Scholar
4. Yang, K. and Schowalter, L. J., Appl. Phys. Lett. 60, 1851 (1992).CrossRefGoogle Scholar
5. Yang, K., Schowalter, L. J., Launch, B. K., and Smith, D. L., Mat. Res. Soc. Symp. Proc. 240, 265 (1992).CrossRefGoogle Scholar
6. Yang, K. and Schowalter, L. J., Mat. Res. Soc. Symp. Proc. 263, in press.Google Scholar
7. Nagata, S. and Tanaka, T., J. Appl. Phys. 48, 940 (1977).CrossRefGoogle Scholar
8. Neave, J. H., Dobson, P. J., Joyce, B. A. and Zhang, J., Appl. Phys. Lett. 47, 100 (1985).CrossRefGoogle Scholar