Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-28T22:25:54.512Z Has data issue: false hasContentIssue false
  • English
  • Français

Etch Process Optimization and Electrical Improvement in TiN Hard Mask Ultra-Low K Interconnection

Published online by Cambridge University Press:  30 July 2012

Chih-Yang Chang ,
Sean Kang ,
Chia-ling Kao ,
Bhargav S. Citla ,
Nikos Bekiaris ,
Yongmei Chen ,
Lothar Chan-Sew  and
Thorsten Lill
Chih-Yang Chang*
Affiliation:
SSG/ETCH, Applied Materials, 974 E Arques Ave., Sunnyvale, CA 94085 U.S.A.
Sean Kang
Affiliation:
SSG/ETCH, Applied Materials, 974 E Arques Ave., Sunnyvale, CA 94085 U.S.A.
Chia-ling Kao
Affiliation:
SSG/ETCH, Applied Materials, 974 E Arques Ave., Sunnyvale, CA 94085 U.S.A.
Bhargav S. Citla
Affiliation:
SSG/CTO Department, Applied Materials, 974 E Arques Ave., Sunnyvale, CA 94085 U.S.A.
Nikos Bekiaris
Affiliation:
SSG/CTO Department, Applied Materials, 974 E Arques Ave., Sunnyvale, CA 94085 U.S.A.
Yongmei Chen
Affiliation:
SSG/CTO Department, Applied Materials, 974 E Arques Ave., Sunnyvale, CA 94085 U.S.A.
Lothar Chan-Sew
Affiliation:
SSG/ETCH, Applied Materials, 974 E Arques Ave., Sunnyvale, CA 94085 U.S.A.
Thorsten Lill
Affiliation:
SSG/ETCH, Applied Materials, 974 E Arques Ave., Sunnyvale, CA 94085 U.S.A.
*
*Corresponding author. Tel: +1-408-584-0582; E-mail: chih-yang_chang@amat.com
Get access

Abstract

As critical dimensions decrease, key dimension-related dielectric etch challenges emerge, including via and trench uniformity and etch depth profile. The transition to ultra-low-k films such as BDIII (Black Diamond; k=2.55) dielectrics requires consideration of film sensitivity to compositional modification, polymer interactions at pores, and the effect of diffusion. Use of N2/O2 plasma at 60 ˚C to modify the M1 trench profile has been demonstrated to lower the RC delay by 14% as compared to traditional CO2 plasmas at 60˚C. Use of a DHF solution to clean the etching residue in the dual damascene structure results in >97% yield with a tight range of via chain resistance.

Keywords

dielectricchemical reactionplasma deposition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1428: Symposium C – Interconnect Challenges for CMOS Technology—Materials, Processes and Reliability for Downscaling, Packaging and 3D Stacking , 2012 , mrss12-1428-c07-04
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Singer, Peter, “Dual-damascene challenges dielectric etch”, Semiconductor International, 22, 9page 68 (1999).Google Scholar
2. Ueki, Makoto, Tada, Munehiro, Tagami, Masayoshi, Narihiro, Mitsure, Ito, Fuminori and Haysahi, Yoshihiro, “A Robust Low-k/Cu Dual Damascene Interconnect (DDI) with side wall protection layer (SPL), IEEE transactions on device and materials reliability, Vol. 11, No. 1, p98 (2011).Google Scholar
3. Kim, Nam-Hoon, Kim, Sang-Yong, Lee, Hyun-Ki, Lee, Kang-Yeon, Kim, Chang-II and Chang, Eui-Goo, “Yield improvement of 0.13 um Cu/low-k dual-damascene interconnection by organic cleaning process”, Journal of Vacuum Science Technology B, 25(6), 1819 (2007).Google Scholar
4. Posseme, N., Chevolleau, T, Bouyssou, R., David, T., Arnal, V., Barnes, J.P, Verove, C. and Joubert, O., “Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms”, Journal of Vacuum Science Technology B, 29(1), 809 (2010)Google Scholar
5. Cheng, Yi-Lung, Chiu, Tai-Jung, Wei, Bor-Jor, Wang, Huan-Jung, Wu, Jiung and Wang, Ying-Lang, “Moisture effect on electromigration characteristics for copper dual damascene interconnection”, Journal of Vacuum Science Technology B, 28(3), 567 (2010)Google Scholar
6. Cheng, Yi-Lung, Chang, Wei-Yuan and Wang, Ying-Lang, “Moisture effect on electromigration characteristics for copper dual damascene interconnection”, Journal of Vacuum Science Technology B, 28(6), 1322 (2010)Google Scholar
7. Posseme, N., Bouyssou, R., Chevolleau, T, David, T., Arnal, V., Darnon, M., Burn, Ph., Verove, C. and Joubert, O., “Residue growth on metallic-hard mask after dielectric etching in fluorocarbonbased plasmas. II. Solutions”, Journal of Vacuum Science Technology B, 28(4), 011018 (2011)Google Scholar
8. Gorman, B.P, Orozco-Teran, R.A., Zhang, Z., Matz, P.D., Mueller, D.W. and Reidy, R.F., “Rapid repair of plasma ash damage in low-k dielectrics using supercritical CO2 ”, Journal of Vacuum Science Technology B, 22(3), 1210 (2010)Google Scholar
9. Clifford, T., Fundamentals of Supercritical Fluid (Oxford University Press, New York, 1999)Google Scholar