Hostname: page-component-6bf8c574d5-8gtf8 Total loading time: 0 Render date: 2025-02-22T23:43:25.279Z Has data issue: false hasContentIssue false
  • English
  • Français

Evaluation of Subsurface Ion Implant Damage by Photothermal Displacement Measurement

Published online by Cambridge University Press:  25 February 2011

Hiroyuki Takamatsu ,
Singo Sumie ,
Yoshiro Nishimoto ,
Hidetoshi Tsunaki ,
Koichi Nishine  and
Tohru Hara
Hiroyuki Takamatsu
Affiliation:
Kobe Steel, Ltd., 1–5–5 Takastukadai, Nishi-ku, Kobe, Hyogo 651–22, Japan
Singo Sumie
Affiliation:
Kobe Steel, Ltd., 1–5–5 Takastukadai, Nishi-ku, Kobe, Hyogo 651–22, Japan
Yoshiro Nishimoto
Affiliation:
Kobe Steel, Ltd., 1–5–5 Takastukadai, Nishi-ku, Kobe, Hyogo 651–22, Japan
Hidetoshi Tsunaki
Affiliation:
Kobe Steel, Ltd., 1–5–5 Takastukadai, Nishi-ku, Kobe, Hyogo 651–22, Japan
Koichi Nishine
Affiliation:
Kobe Steel, Ltd., 1–5–5 Takastukadai, Nishi-ku, Kobe, Hyogo 651–22, Japan
Tohru Hara
Affiliation:
Hosei University, Koganei, Tokyo 184, Japan
Get access

Abstract

Subsurface damage in silicon formed by ion implantation and the residual damage after annealing have been successfully evaluated by measuring the photo-acoustic displacement (PAD) induced by an intensity modulated pump beam. The PAD was detected by a laser interferometrie probe with a sensitivity of 0.1 picometers in a noncontact manner. A temperature rise within the subsurface damage due to a decrease in the thermal conductivity leads to significant thermal expansion and causes a displacement on the sample surface. Therefore, subsurface damage can be monitored by measuring the PAD. Experimental results for As+ and B+ implanted samples indicate that recrystallization of ion implant damage by annealing can be monitored by this technique. Samples of higher doses (>1014/cm2) have residual damage even after annealing at 800'C for 30 minutes. The results for high-energy (2MeV) implanted samples also show that the secondary defects after annealing, which are formed in a deep region a few microns under the surface, can be detected with high sensitivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 261
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Pramanik, D. and Current, M., Solid StateTechnol., 27, 211, (1984).Google Scholar
(2) Tamura, M., Natsuaki, N., Wada, Y. and Mitani, E., J. Appl. Phys., 59, 3417, (1986).Google Scholar
(3) Tamura, M. and Horiuchi, M., Jpn. J. Appl. Phys., 27, 2209, (1988).Google Scholar
(4) Nieh, C. W. and Chen, L. J., J. Appl Phys., 60, 3114, (1986.)Google Scholar
(5) Holland, O. W., El-Ghorand, M. K. and White, C. W., Appl Phys. Lett., 53, 1282, (1988).Google Scholar
(6) Smith, W. L., Taylor, M. W. and Schuur, J., Proc. of. SPIE, 201, (1985).CrossRefGoogle Scholar
(7) Washidzu, G., Hara, T., IchUcawa, R., Takamatsu, H., Sumie, S., Nishimoto, Y., Nakai, Y., Hashizumeand, H., Miyoshi, T., Jpn. J. Appl. Phys., 30, L1025, (1991).Google Scholar
(8) Takamatsu, H., Nishimoto, Y. and Nakai, Y., Jpn. J. Appl. Phys., 29, 2847, (1990).Google Scholar