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Evaluation of the Electrical Properties, Piezoresistivity and Noise of poly-SiGe for MEMS-above-CMOS applications

Published online by Cambridge University Press:  31 January 2011

Pilar Gonzalez ,
Silvia Lenci ,
Luc Haspeslagh ,
Kristin De Meyer  and
Ann Witvrouw
Pilar Gonzalez
Affiliation:
pilar.gonzalez@imec.be, IMEC, Leuven, Belgium
Silvia Lenci
Affiliation:
Silvia.Lenci@imec.be, IMEC, Leuven, Belgium
Luc Haspeslagh
Affiliation:
Luc.Haspeslagh@imec.be, IMEC, Leuven, Belgium
Kristin De Meyer
Affiliation:
Kristin.DeMeyer@imec.be, IMEC, Leuven, Belgium
Ann Witvrouw
Affiliation:
Ann.Witvrouw@imec.be, IMEC, Leuven, Belgium
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Abstract

In this work, the electrical properties of heavily doped poly-SiGe deposited at temperatures compatible with MEMS integration on top of standard CMOS are reported. The properties studied are resistivity, temperature coefficient of resistance, noise, piezoresistivity, Hall mobility and effective carrier concentration. The obtained results prove the potential of using poly-SiGe as a sensing layer for MEMS-above-CMOS applications.

Keywords

electrical propertiespiezoresponsepolycrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A19-04
Copyright
Copyright © Materials Research Society 2009

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