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Evolution of Cubic FeSi2 in Si upon Thermal Annealing

Published online by Cambridge University Press:  21 February 2011

X.X. Lin ,
J. Desimoni ,
H. Bemas ,
Z. Liliental-Weber  and
J. Washburn
X.X. Lin
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, CA 94720
J. Desimoni
Affiliation:
Centre de Spectromètrie Nucléaire et Spectromètrie de Masse, Bât. 108, 91405 Orsay Campus, France
H. Bemas
Affiliation:
Centre de Spectromètrie Nucléaire et Spectromètrie de Masse, Bât. 108, 91405 Orsay Campus, France
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, CA 94720
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, CA 94720
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Abstract

Cubic FeSi2 precipitates were produced in Si (001) wafers by Fe implantation at room temperature, followed by ion beam-induced crystallization at 320°C, and their stability upon thermal annealing was examined by transmission electron microscopy. We found that the cubic phase remains relatively stable for a 650°C anneal, but the precipitates tend to change from an aligned to a twinned orientation with respect to the Si matrix. For higher temperature (800 and 900°C) anneals, most of the precipitates are transformed into β-FeSi2, accompanied by substantial precipitate coarsening. For platelet-shaped precipitates, the coarsening activation energy was determined to be 3.48 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 293
Copyright
Copyright © Materials Research Society 1993

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References

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