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Exciton Lifetimes in GaN

Published online by Cambridge University Press:  21 February 2011

J.P. Bergman ,
C. Harris ,
B. Monemar ,
H. Amano  and
I. Akasaki
J.P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S - 58183 Linköping, Sweden
C. Harris
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S - 58183 Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S - 58183 Linköping, Sweden
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, Nagoya 468, Japan
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Abstract

We have performed time resolved photoluminescence measurements of the exciton recombination in different GaN samples at low temperatures. In epitaxial layers the decay time of the free exciton is typically faster than 100 ps. This is due to a dominating non-radiative recombination process. In thick bulk samples we have resolved and measured the decay time of the free exciton with a value of about 200 ps. We believe that this value is close to the radiative lifetime for free excitons in GaN. We have also shown that excitation transfer occurs between free and bound exciton states. We have furthermore measured the decay of the donor and acceptor bound excitons, and obtained values of the decay time of 250 ps and 1200 ps, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 709
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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