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Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees

Published online by Cambridge University Press:  01 February 2011

C. L. Gan ,
C. V. Thompson ,
K. L. Pey ,
W. K. Choi ,
F. Wei ,
B. Yu  and
S. P. Hau-Riege
C. L. Gan
Affiliation:
Advanced Materials for Micro- and Nano- Systems Programme, Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576.
C. V. Thompson
Affiliation:
Advanced Materials for Micro- and Nano- Systems Programme, Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
K. L. Pey
Affiliation:
Advanced Materials for Micro- and Nano- Systems Programme, Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576. National University of Singapore, now with School of Electrical & Electronics Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798.
W. K. Choi
Affiliation:
Advanced Materials for Micro- and Nano- Systems Programme, Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576. Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576.
F. Wei
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
B. Yu
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore 117685, now with PDF Solutions, Inc. San Jose, CA 95110, USA
S. P. Hau-Riege
Affiliation:
Intel Corp., Hillsborough, OR 97124, now with Lawrence Livermore National Laboratory, Livermore, CA94550, USA
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Abstract

Electromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B8.13
Copyright
Copyright © Materials Research Society 2002

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