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Experimental Results from γ-irradiated GaAs Crystals Grown with Different Techniques

Published online by Cambridge University Press:  21 February 2011

W. Bencivelli ,
E. Bertolucci ,
U. Bottigli ,
A. Cavallini ,
S. D'Auria ,
C. Da Via ,
C. Del Papa ,
M.E. Fantacci ,
V. Rosso  and
A. Stefanini
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W. Bencivelli
Affiliation:
Istituto di Patologia Speciale Medica dell'Università and Sezione I.N.F.N., Pisa, Italy
E. Bertolucci
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
U. Bottigli
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
A. Cavallini
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Bologna, Italy
S. D'Auria
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Bologna, Italy
C. Da Via
Affiliation:
European Laboratory for Particle Physics (CERN), Geneva, Switzerland
C. Del Papa
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Bologna, Italy
M.E. Fantacci
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
V. Rosso
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
A. Stefanini
Affiliation:
Dipartimento di Fisica dell'Università and Sezione I.N.F.N., Pisa, Italy
G. Stefanini
Affiliation:
European Laboratory for Particle Physics (CERN), Geneva, Switzerland
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Abstract

Gallium Arsenide crystals are among the most efficient detectors of X-rays at room temperature. Different GaAs crystals have been irradiated with photons from radioactive sources, to compare their response in view of a possible application for Digital Radiology. The detectors have been obtained by various manufacturers and with different techniques (LEC and LPE crystals). Experimental results include I-V curves, charge collection efficiency and detection efficiency as a function of bias. A comparison is made with a simulation program.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 381
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Bencivelli, W., Bertolucci, E., Bottigli, U., Guerra, A. Del, Mazzei, D., Messineo, A., Nelson, W.R., Randaccio, P., Rosso, V., Russo, P., Stefanini, A., Nucl. Instr. & Meth. A305, 574 (1991).Google Scholar
[2] Alfano, B., Bandettini, A., Bencivelli, W., Bertolucci, E., Bottigli, U., Conti, M., Guerra, A. Del, Fantacci, M.E., Penkowski, M., Randaccio, P., Rosso, V., Russo, P., Stefanini, A., Phys. Med. and Biol. 37(5), 1167 (1992).Google Scholar
[3] Bencivelli, W., Bertolucci, E., Bottigli, U., Guerra, A. Del, Messineo, A., Nelson, W.R., Randaccio, P., Rosso, V., Russo, P., Stefanini, A., Nucl. Instr. & Meth. A310, 210 (1991).Google Scholar
[4] Bertin, R., D'Auria, S., Papa, C. Del, Fiori, F., Lisowski, B., O'Shea, V., Pelfer, P.G., Smith, K., Zichichi, A., Nucl. Instr. & Meth. A294, 211 (1990).CrossRefGoogle Scholar
[5] Alexiev, D. and Butcher, K.S.A., Nucl. Instr. & Meth. A317, 111 (1992).Google Scholar
[6] Nelson, W.R., Hirayama, H., Rogers, D.W.O., Stanford Linear Accelerator Center Report, SLAC-265 (1985).Google Scholar
[7] Gatti, E. and Manfredi, P.F., La Rivista del Nuovo Cimento 1, 20 (1986).Google Scholar
[8] Batignani, G., Bertolucci, E., Bottigli, U., Bucciolini, M., Conti, A., Guerra, A. Del, Pascalis, G. De, Maiano, P., Messineo, A., Milano, F., Randaccio, P., Renzi, R., Rizzo, C., Roberti, G., Rosso, V., Russo, P., Stefanini, A., Phys. Med. 6(1), 39 (1990).Google Scholar
[9] Blankenship, J.L., Mruk, W.F., Bull. Amer. Phys. Soc. 9, 49 (1964).Google Scholar
[10] Sze, S.M., Physics of semiconductor devices, (Wiley-Interscience, New York, 1981), p. 747.Google Scholar